Invention Grant
- Patent Title: PTAT sensor and temperature sensing method thereof
- Patent Title (中): PTAT传感器及其温度检测方法
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Application No.: US12631138Application Date: 2009-12-04
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Publication No.: US07915947B2Publication Date: 2011-03-29
- Inventor: Ming-Chung Liu , Shuo-Yuan Hsiao
- Applicant: Ming-Chung Liu , Shuo-Yuan Hsiao
- Applicant Address: TW Hsinchu Hsien
- Assignee: MStar Semiconductor, Inc.
- Current Assignee: MStar Semiconductor, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: WPAT, PC
- Agent Justin King
- Priority: TW98106349A 20090227
- Main IPC: H01L37/00
- IPC: H01L37/00

Abstract:
A proportional to absolute temperature (PTAT) sensor is capable of reducing a sensing error resulted from a mismatch between circuit components. The PTAT sensor includes a control unit, a sensing unit and a calculation unit. The control unit generates a control signal. The sensing unit, comprising at least a pair of circuit components having a matching relationship, senses an absolute temperature under the first connection configuration and the second connection configuration respectively to generate a first voltage value and a second voltage value, wherein the first connection configuration and the second connection configuration are decided by interchanging the circuit connections of the pair of circuit components according to the control signal. And the calculation unit, coupled to the sensing unit, calculates a PTAT voltage value according to the first voltage value and the second voltage values.
Public/Granted literature
- US20100219879A1 PTAT Sensor and Temperature Sensing Method Thereof Public/Granted day:2010-09-02
Information query
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