Invention Grant
- Patent Title: Magnetic tunnel transistor having a base structure that provides polarization of unpolarized electrons from an emitter based upon a magnetic orientation of a free layer and a self-pinned layer
- Patent Title (中): 具有基极结构的磁隧道晶体管，其基于自由层和自固位层的磁取向提供来自发射极的非偏振电子的偏振
-
Application No.: US11760911Application Date: 2007-06-11
-
Publication No.: US07916435B1Publication Date: 2011-03-29
- Inventor: Hardayal Singh Gill
- Applicant: Hardayal Singh Gill
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Merchant & Gould
- Main IPC: G11B5/33
- IPC: G11B5/33
Abstract:
A magnetic tunnel transistor (MTT) is formed having an emitter that is configured to provide unpolarized electrons. A composite base is configured to provide polarization of the unpolarized electrons injected into the base by the emitter based upon a magnetic orientation of the free layer and the self-pinned layer of the base.
Information query
IPC分类:
