Invention Grant
- Patent Title: Forecasting program disturb in memory by detecting natural threshold voltage distribution
- Patent Title (中): 通过检测自然阈值电压分布来预测记忆中的干扰
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Application No.: US12490557Application Date: 2009-06-24
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Publication No.: US07916533B2Publication Date: 2011-03-29
- Inventor: Yingda Dong , Cynthia Hsu
- Applicant: Yingda Dong , Cynthia Hsu
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04

Abstract:
Program disturb is reduced in a non-volatile storage system during a programming operation by determining a susceptibility of a set of storage elements to program disturb and taking a corresponding precautionary measure, if needed, to reduce the likelihood of program disturb occurring. During programming of a lower page of data, a natural threshold voltage distribution of the set of storage elements is determined by tracking storage elements which are programmed to a particular state, and determining how many program pulses are need for a number N1 and a number N2>N1 of the storage elements to reach the particular state. Temperature and word line position can also be used to determine the susceptibility to program disturb. A precautionary measure can involve using a higher pass voltage, or abandoning programming of an upper page of data or an entire block. In some cases, programming continues with no precautionary measure.
Public/Granted literature
- US20100329002A1 FORECASTING PROGRAM DISTURB IN MEMORY BY DETECTING NATURAL THRESHOLD VOLTAGE DISTRIBUTION Public/Granted day:2010-12-30
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