Invention Grant
- Patent Title: Semiconductor laser device and manufacturing method thereof
- Patent Title (中): 半导体激光器件及其制造方法
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Application No.: US12511218Application Date: 2009-07-29
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Publication No.: US07916766B2Publication Date: 2011-03-29
- Inventor: Masayuki Hata , Yasuhiko Nomura , Kyoji Inoshita
- Applicant: Masayuki Hata , Yasuhiko Nomura , Kyoji Inoshita
- Applicant Address: JP Moriguchi
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Moriguchi
- Agency: Mots Law, PLLC
- Agent Marvin A. Motsenbocker
- Priority: JP2008-201851 20080805
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S3/097

Abstract:
A first semiconductor laser element is formed on a surface of the first substrate and including a first active layer. A second semiconductor laser element is bonded to the first semiconductor laser element with a first insulating film interposed therebetween. A first electrode is connected to the first semiconductor laser element. A second electrode is arranged on the surface of the first semiconductor laser element with the first insulating film interposed therebetween and connected to the second semiconductor laser element. The first semiconductor laser element has an optical waveguide formed in a region where the second semiconductor laser element is not bonded while the first electrode is arranged on the region, and the second electrode is formed to extend from between the second semiconductor laser element and first insulating film toward the region.
Public/Granted literature
- US20100034234A1 SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-02-11
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