Invention Grant
- Patent Title: Wet tantalum reformation method and apparatus
- Patent Title (中): 湿钽改造方法及装置
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Application No.: US10431356Application Date: 2003-05-07
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Publication No.: US07917217B2Publication Date: 2011-03-29
- Inventor: John D. Norton , Brian J. Melody , John Tony Kinard
- Applicant: John D. Norton , Brian J. Melody , John Tony Kinard
- Applicant Address: US MN Minneapolis US SC Simpsonville
- Assignee: Medtronic, Inc.,Kemet Electronics Corporation
- Current Assignee: Medtronic, Inc.,Kemet Electronics Corporation
- Current Assignee Address: US MN Minneapolis US SC Simpsonville
- Main IPC: A61N1/00
- IPC: A61N1/00
Abstract:
A method of reforming a wet-tantalum capacitor is disclosed. The method comprises charging the capacitor to a voltage that is substantially less than one of a maximum and rated voltage for the capacitor. The method also comprises providing an open circuit condition and allowing the capacitor to at least partially discharge through leakage current.
Public/Granted literature
- US20040225327A1 Wet tantalum reformation method and apparatus Public/Granted day:2004-11-11
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