Invention Grant
US07918014B2 Method of manufacturing a CPP structure with enhanced GMR ratio
有权
制造具有增强的GMR比的CPP结构的方法
- Patent Title: Method of manufacturing a CPP structure with enhanced GMR ratio
- Patent Title (中): 制造具有增强的GMR比的CPP结构的方法
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Application No.: US11180808Application Date: 2005-07-13
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Publication No.: US07918014B2Publication Date: 2011-04-05
- Inventor: Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
- Applicant: Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/187
- IPC: G11B5/187 ; C23C14/34

Abstract:
A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and λS values. A small positive magnetostriction value in a Co75Fe25 layer is used to offset a negative magnetostriction value in a Ni90Fe10 layer. The CoFe layer is deposited on a sensor stack in which a seed layer, AFM layer, pinned layer, and non-magnetic spacer layer are sequentially formed on a substrate. After a NiFe layer and capping layer are sequentially deposited on the CoFe layer, the sensor stack is patterned to give a sensor element with top and bottom surfaces and a sidewall connecting the top and bottom surfaces. Thereafter, a dielectric layer is formed adjacent to the sidewalls.
Public/Granted literature
- US20070014054A1 CPP structure with enhanced GMR ratio Public/Granted day:2007-01-18
Information query
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