Invention Grant
- Patent Title: Method of fabricating a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11811749Application Date: 2007-06-12
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Publication No.: US07918018B2Publication Date: 2011-04-05
- Inventor: Donald C. Abbott , Usman M. Chaudhry
- Applicant: Donald C. Abbott , Usman M. Chaudhry
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Yingsheng Tung; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H05K3/34
- IPC: H05K3/34

Abstract:
In a method and apparatus for fabricating a semiconductor device having a flexible tape substrate, a hole is punched in the flexible tape substrate. The flexible tape substrate includes a metal layer attached to a polyimide layer without an adhesive there between. A cover is placed on the metal layer to cap a base of the hole. A metal is deposited on the cover exposed at the base of the hole, the metal being used to form a bond with the metal layer. The metal being deposited causes the hole to be plugged up to a selective height. Upon removal of the cover, the metal may also be deposited on the metal layer to increase a thickness of the metal layer.
Public/Granted literature
- US20080307644A1 Metal plugged substrates with no adhesive between metal and polyimide Public/Granted day:2008-12-18
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