Invention Grant
US07919005B2 Dry etching method, fine structure formation method, mold and mold fabrication method
有权
干蚀刻法，精细结构形成法，模具和模具制造方法
- Patent Title: Dry etching method, fine structure formation method, mold and mold fabrication method
- Patent Title (中): 干蚀刻法，精细结构形成法，模具和模具制造方法
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Application No.: US11659109Application Date: 2006-05-23
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Publication No.: US07919005B2Publication Date: 2011-04-05
- Inventor: Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
- Applicant: Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-151412 20050524; JP2005-151413 20050524; JP2005-151414 20050524; JP2006-034852 20060213
- International Application: PCT/JP2006/310214 WO 20060523
- International Announcement: WO2006/126520 WO 20061130
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/302
Abstract:
A WC substrate 7 is etched by using plasma 50 generated from a gas including a chlorine atom.
Public/Granted literature
- US20090011065A1 Dry etching method, fine structure formation method, mold and mold fabrication method Public/Granted day:2009-01-08
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