Invention Grant
- Patent Title: Doped organic semiconductor material
- Patent Title (中): 掺杂有机半导体材料
-
Application No.: US11315072Application Date: 2005-12-22
-
Publication No.: US07919010B2Publication Date: 2011-04-05
- Inventor: Ansgar Werner , Horst Hartmann , Fenghong Li , Martin Pfeiffer , Karl Leo
- Applicant: Ansgar Werner , Horst Hartmann , Fenghong Li , Martin Pfeiffer , Karl Leo
- Applicant Address: DE Dresden
- Assignee: Novaled AG
- Current Assignee: Novaled AG
- Current Assignee Address: DE Dresden
- Agency: Sutherland, Asbill & Brennan LLP
- Main IPC: C30B15/00
- IPC: C30B15/00
Abstract:
The present invention relates to a doped organic semiconductor material comprising an organic matrix material which is doped with at least one heteromonocyclic and/or heteropolycyclic compound, the compound having at least one nitrogen atom with a free electron pair.
Public/Granted literature
- US20070145355A1 Doped organic semiconductor material Public/Granted day:2007-06-28
Information query
IPC分类:
