Invention Grant
US07919142B2 Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same
有权
使用中性光束的原子层沉积设备和使用其沉积原子层的方法
- Patent Title: Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same
- Patent Title (中): 使用中性光束的原子层沉积设备和使用其沉积原子层的方法
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Application No.: US11348471Application Date: 2006-02-07
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Publication No.: US07919142B2Publication Date: 2011-04-05
- Inventor: Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
- Applicant: Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
- Applicant Address: KR Suwon
- Assignee: Sungkyunkwan University Foundation for Corporate Collaboration
- Current Assignee: Sungkyunkwan University Foundation for Corporate Collaboration
- Current Assignee Address: KR Suwon
- Agency: Foley & Lardner LLP
- Priority: KR10-2005-0023782 20050322
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C14/28 ; C23C14/30 ; H05B6/00 ; H05B7/00

Abstract:
Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.
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