Invention Grant
- Patent Title: Method of forming pattern of semiconductor device
- Patent Title (中): 半导体器件形成方法
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Application No.: US11962483Application Date: 2007-12-21
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Publication No.: US07919228B2Publication Date: 2011-04-05
- Inventor: Dae Woo Kim
- Applicant: Dae Woo Kim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2007-0025522 20070315
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
The present invention relates to a method of forming a pattern of a semiconductor device. According to the method, patterns are formed on a substrate. First photoresist patterns are formed in regions where the patterns are opened. The first photoresist patterns are diffused to upper corners of the patterns, thus forming second photoresist patterns. The patterns are etched using the second photoresist patterns as an etch-stop layer. Accordingly, smaller photomask patterns can be formed.
Public/Granted literature
- US20080227034A1 METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE Public/Granted day:2008-09-18
Information query
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