Invention Grant
- Patent Title: Method for manufacturing light-emitting device
- Patent Title (中): 发光装置的制造方法
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Application No.: US12476556Application Date: 2009-06-02
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Publication No.: US07919340B2Publication Date: 2011-04-05
- Inventor: Hisao Ikeda , Takahiro Ibe
- Applicant: Hisao Ikeda , Takahiro Ibe
- Applicant Address: JP
- Assignee: Semiconductor Energy laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2008-146716 20080604
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
In the present invention, a first substrate which is an evaporation donor substrate is prepared in which a material layer is formed over a patterned reflective layer. A surface of the material layer over the first substrate is irradiated with first light which satisfies one predetermined irradiation condition to pattern the material layer. A surface opposite to the surface of the first substrate is irradiated with second light which satisfies another predetermined irradiation condition to evaporate the patterned material layer onto a second substrate, which is a deposition target substrate. According to the present invention, deterioration of a material included in the material layer can be prevented and a film pattern can be formed on the second substrate with high accuracy.
Public/Granted literature
- US20090305445A1 Method for Manufacturing Light-Emitting Device Public/Granted day:2009-12-10
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