Invention Grant
US07919351B2 CMOS image sensor with multi-layered planarization layer and method for fabricating the same
失效
具有多层平面化层的CMOS图像传感器及其制造方法
- Patent Title: CMOS image sensor with multi-layered planarization layer and method for fabricating the same
- Patent Title (中): 具有多层平面化层的CMOS图像传感器及其制造方法
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Application No.: US12211124Application Date: 2008-09-16
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Publication No.: US07919351B2Publication Date: 2011-04-05
- Inventor: Jong-Taek Hwang
- Applicant: Jong-Taek Hwang
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2007-0095210 20070919
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/31 ; H01L21/469 ; H01L31/062 ; H01L31/113 ; H01L31/00

Abstract:
A CMOS image sensor and a method for fabricating the same for preventing contamination and peeling of an array of micro lenses. The CMOS image sensor includes a plurality of photodiodes formed on and/or over a substrate, an insulating film formed on and/or over an entire surface of the substrate including the photodiodes, color filter layers formed on and/or over the insulating film, a first oxide film formed on and/or over the color filter layers, an ion-rich oxide film formed by injecting silicon ions into the first oxide film, a second oxide film formed on and/or over the ion-rich oxide film, and a micro lens pattern formed corresponding to the photodiodes by patterning the second oxide film.
Public/Granted literature
- US20090072285A1 CMOS IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2009-03-19
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