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US07919351B2 CMOS image sensor with multi-layered planarization layer and method for fabricating the same 失效
具有多层平面化层的CMOS图像传感器及其制造方法

CMOS image sensor with multi-layered planarization layer and method for fabricating the same
Abstract:
A CMOS image sensor and a method for fabricating the same for preventing contamination and peeling of an array of micro lenses. The CMOS image sensor includes a plurality of photodiodes formed on and/or over a substrate, an insulating film formed on and/or over an entire surface of the substrate including the photodiodes, color filter layers formed on and/or over the insulating film, a first oxide film formed on and/or over the color filter layers, an ion-rich oxide film formed by injecting silicon ions into the first oxide film, a second oxide film formed on and/or over the ion-rich oxide film, and a micro lens pattern formed corresponding to the photodiodes by patterning the second oxide film.
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