Invention Grant
- Patent Title: Flash device and the manufacturing method
- Patent Title (中): 闪存器件和制造方法
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Application No.: US11929900Application Date: 2007-10-30
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Publication No.: US07919370B2Publication Date: 2011-04-05
- Inventor: Hyun Ju Lim
- Applicant: Hyun Ju Lim
- Applicant Address: KR Seoul
- Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Eisenschenk
- Priority: KR10-2006-0135884 20061228
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A flash device and a manufacturing method thereof are provided. An ONO pattern can be formed on a floating gate, and a control gate can be formed on the ONO pattern. The ONO pattern can be formed with a portion that projects farther out than the sides of the floating gate and the control gate.
Public/Granted literature
- US20080157177A1 Flash Device and the Manufacturing Method Public/Granted day:2008-07-03
Information query
IPC分类:
