Invention Grant
- Patent Title: Contactless flash memory array
- Patent Title (中): 非接触式闪存阵列
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Application No.: US12070928Application Date: 2008-02-22
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Publication No.: US07919377B2Publication Date: 2011-04-05
- Inventor: Everett B. Lee
- Applicant: Everett B. Lee
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8238 ; H01L21/3205 ; H01L21/4763
Abstract:
A method for forming a contactless flash memory cell array is disclosed. According to an embodiment of the invention, a plurality of active regions is formed on a substrate. An insulating layer is then deposited over the active regions, and a portion of the insulating layer is removed to form a one-dimensional slot and to provide access to the active regions. A bit line is then formed in the slot in contact with the active regions.
Public/Granted literature
- US20080160711A1 Contactless flash memory array Public/Granted day:2008-07-03
Information query
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