Invention Grant
- Patent Title: Methods for preparing a bonding surface of a semiconductor wafer
- Patent Title (中): 制备半导体晶片的接合表面的方法
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Application No.: US11145455Application Date: 2005-06-02
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Publication No.: US07919391B2Publication Date: 2011-04-05
- Inventor: Cécile Delattre , Frédéric Metral , Daniel Delprat , Christophe Maleville
- Applicant: Cécile Delattre , Frédéric Metral , Daniel Delprat , Christophe Maleville
- Applicant Address: FR Bernin
- Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0413922 20041224; FR0413930 20041224
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L21/301
Abstract:
The invention concerns a method of treating one or both bonding surfaces of first and second substrates and in particular, the surfaces of donor and receiver wafers that are intended to be bonded together. A simultaneous cleaning and activation step is carried out immediately prior to bonding the wafers together, by applying to one or both bonding surfaces an activation solution of ammonia (NH4OH) in water, preferably deionized, at a concentration by weight in the range from about 0.05% to 2%. The method is applicable to fabricating structures used in the optics, electronics, or optoelectronics fields.
Public/Granted literature
- US20060141746A1 Methods for forming semiconductor structures Public/Granted day:2006-06-29
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