Invention Grant
- Patent Title: Method of fabricating an organic thin film transistor
- Patent Title (中): 制造有机薄膜晶体管的方法
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Application No.: US12318915Application Date: 2009-01-12
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Publication No.: US07919396B2Publication Date: 2011-04-05
- Inventor: Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
- Applicant: Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
- Applicant Address: KR Giheung-Gu, Yongin, Gyunggi-Do
- Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee Address: KR Giheung-Gu, Yongin, Gyunggi-Do
- Agent Robert E. Bushnell, Esq.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36

Abstract:
An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.
Public/Granted literature
- US20090170291A1 Method of fabricating an organic thin film transistor Public/Granted day:2009-07-02
Information query
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