Invention Grant
US07919400B2 Methods for doping nanostructured materials and nanostructured thin films
有权
掺杂纳米结构材料和纳米结构薄膜的方法
- Patent Title: Methods for doping nanostructured materials and nanostructured thin films
- Patent Title (中): 掺杂纳米结构材料和纳米结构薄膜的方法
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Application No.: US12163443Application Date: 2008-06-27
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Publication No.: US07919400B2Publication Date: 2011-04-05
- Inventor: Howard W. H. Lee
- Applicant: Howard W. H. Lee
- Applicant Address: US CA San Jose
- Assignee: Stion Corporation
- Current Assignee: Stion Corporation
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/04
- IPC: H01L21/04
Abstract:
A method for introducing one or more impurities into nano-structured materials. The method includes providing a nanostructured material having a feature size of about 100 nm and less. The method includes subjecting a surface region of the nanostructured material to one or more impurities to form a first region having a first impurity concentration within a vicinity of the surface region. In a specific embodiment, the method includes applying a driving force to one or more portions of at least the nanostructured material to cause the first region to form a second region having a second impurity concentration.
Public/Granted literature
- US20090017605A1 METHODS FOR DOPING NANOSTRUCTURED MATERIALS AND NANOSTRUCTURED THIN FILMS Public/Granted day:2009-01-15
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