Invention Grant
US07919408B2 Methods for fabricating fine line/space (FLS) routing in high density interconnect (HDI) substrates
有权
在高密度互连（HDI）衬底中制造细线/空间（FLS）布线的方法
- Patent Title: Methods for fabricating fine line/space (FLS) routing in high density interconnect (HDI) substrates
- Patent Title (中): 在高密度互连（HDI）衬底中制造细线/空间（FLS）布线的方法
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Application No.: US12164977Application Date: 2008-06-30
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Publication No.: US07919408B2Publication Date: 2011-04-05
- Inventor: Mark S. Hlad , Sheng Li
- Applicant: Mark S. Hlad , Sheng Li
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
A method for fabricating fine line and space routing described. The method includes providing a substrate having a dielectric layer and a seed layer disposed thereon. An anti-reflective coating layer and a photo-resist layer are then formed above the seed layer. The photo-resist layer and the anti-reflective coating layer are patterned to form a patterned photo-resist layer and a patterned anti-reflective coating layer, to expose a first portion of the seed layer, and to leave covered a second portion of the seed layer. A metal layer is then formed on the first portion of the seed layer, between features of the patterned photo-resist layer and the patterned anti-reflective coating layer. The patterned photo-resist layer and the patterned anti-reflective coating layer are subsequently removed. Then, the second portion of the seed layer is removed to provide a series of metal lines above the dielectric layer.
Public/Granted literature
- US20090325379A1 METHODS FOR FABRICATING FINE LINE/SPACE (FLS) ROUTING IN HIGH DENSITY INTERCONNECT (HDI) SUBSTRATES Public/Granted day:2009-12-31
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