Invention Grant
- Patent Title: Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same
- Patent Title (中): 制造布线，薄膜晶体管，发光装置和液晶显示装置的方法以及用于形成它的液滴喷射装置
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Application No.: US12432503Application Date: 2009-04-29
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Publication No.: US07919411B2Publication Date: 2011-04-05
- Inventor: Osamu Nakamura , Kiyofumi Ogino
- Applicant: Osamu Nakamura , Kiyofumi Ogino
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2003-344202 20031002
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a dot spreads on a wiring formation surface, and it is difficult to narrow width of a wiring. In the present invention, a photocatalytic substance typified by TiO2 is formed on a wiring formation surface, and a wiring is formed by utilizing photocatalytic activity of the photocatalytic substance. According to the present invention, a narrower wiring, that is, a smaller wiring in width than a diameter of a dot formed by an ink-jet method can be formed.
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