Invention Grant
- Patent Title: Over-passivation process of forming polymer layer over IC chip
- Patent Title (中): 在IC芯片上形成聚合物层的过钝化工艺
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Application No.: US12273546Application Date: 2008-11-19
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Publication No.: US07919412B2Publication Date: 2011-04-05
- Inventor: Ying-Chih Chen , Mou-Shiung Lin , Chiu-Ming Chou
- Applicant: Ying-Chih Chen , Mou-Shiung Lin , Chiu-Ming Chou
- Applicant Address: TW Hsinchu
- Assignee: Megica Corporation
- Current Assignee: Megica Corporation
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Priority: TW93121260A 20040716
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for forming a semiconductor chip or wafer includes following steps. A semiconductor substrate is provided, and then a polymer layer is deposited over the semiconductor substrate, wherein the polymer layer comprises polyimide. The polymer layer with a temperature profile having a peak temperature between 200 and 320 degrees Celsius. Alternatively, the temperature profile may comprises a period of time with a temperature higher than 320 degree Celsius, wherein the period of time is shorter than 45 minutes.
Public/Granted literature
- US20090111261A1 Over-passivation process of forming polymer layer over IC chip Public/Granted day:2009-04-30
Information query
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