Invention Grant
- Patent Title: Aqueous solution for removing post-etch residue
- Patent Title (中): 用于去除蚀刻后残留物的水溶液
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Application No.: US10594767Application Date: 2005-03-10
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Publication No.: US07919445B2Publication Date: 2011-04-05
- Inventor: Raimund Mellies
- Applicant: Raimund Mellies
- Applicant Address: DE Ludwigshafen
- Assignee: BASF Aktiengesellschaft
- Current Assignee: BASF Aktiengesellschaft
- Current Assignee Address: DE Ludwigshafen
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: EP04007627 20040330
- International Application: PCT/EP2005/002511 WO 20050310
- International Announcement: WO2005/098920 WO 20051020
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
The present invention relates to a novel solution for the removal of post-etch residues having improved properties and to the use thereof in the production of semiconductors. The invention relates, in particular, to an aqueous solution having a reduced etching rate on metallisations and on surfaces which have to be freed from post-etch residues and particles during the semiconductor production process.
Public/Granted literature
- US20070161243A1 Aqueous solution for removing post-etch residue Public/Granted day:2007-07-12
Information query
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