Invention Grant
US07919710B2 Solar cell containing silicon and chalcopyrite semiconductor layers
失效
含硅和黄铜矿半导体层的太阳能电池
- Patent Title: Solar cell containing silicon and chalcopyrite semiconductor layers
- Patent Title (中): 含硅和黄铜矿半导体层的太阳能电池
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Application No.: US12111975Application Date: 2008-04-30
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Publication No.: US07919710B2Publication Date: 2011-04-05
- Inventor: Wei-Lun Lu , Feng-Chien Hsieh , Bae-Heng Tseng
- Applicant: Wei-Lun Lu , Feng-Chien Hsieh , Bae-Heng Tseng
- Applicant Address: TW Taichung
- Assignee: Nexpower Technology Corp.
- Current Assignee: Nexpower Technology Corp.
- Current Assignee Address: TW Taichung
- Agency: Shimokaji & Associates, P.C.
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
A solar cell includes a first electrode, a second electrode and a stacked semiconductor layer. The stacked semiconductor layer is disposed between the first electrode and the second electrode. The stacked semiconductor layer includes a first semiconductor layer, a second semiconductor layer and an intrinsic semiconductor layer. The first semiconductor layer has a first energy gap. The second semiconductor layer has a second energy gap. The intrinsic semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer, wherein the intrinsic semiconductor layer is a chalcopyrite layer and has a third energy gap. The third energy gap is less than the first energy gap and the second energy gap.
Public/Granted literature
- US20090272432A1 SOLAR CELL Public/Granted day:2009-11-05
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