Invention Grant
- Patent Title: Semiconductor memory device and fabrication method thereof
- Patent Title (中): 半导体存储器件及其制造方法
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Application No.: US11812752Application Date: 2007-06-21
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Publication No.: US07919767B2Publication Date: 2011-04-05
- Inventor: Tsutomu Hayakawa
- Applicant: Tsutomu Hayakawa
- Applicant Address: JP Chuo-ku, Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Chuo-ku, Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2006-172077 20060622
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A semiconductor memory device comprises a heater electrode, a phase change portion, a heat insulation portion and an upper electrode. The phase change portion comprises a concave portion and a contact portion. The concave portion is in contact with the heater electrode. The contact portion is formed integrally with the concave portion. The heat insulation portion is formed in the concave portion. The upper electrode is formed on the contact portion and the heat insulation portion so that the heat insulation portion is positioned between the concave portion and the upper electrode.
Public/Granted literature
- US20080006813A1 Semiconductor memory device and fabrication method thereof Public/Granted day:2008-01-10
Information query
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