Invention Grant
- Patent Title: Phase-change memory element
- Patent Title (中): 相变存储元件
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Application No.: US12172162Application Date: 2008-07-11
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Publication No.: US07919768B2Publication Date: 2011-04-05
- Inventor: Frederick T Chen , Ming-Jinn Tsai
- Applicant: Frederick T Chen , Ming-Jinn Tsai
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A phase-change memory cell is proposed. The phase-change memory includes a bottom electrode; a phase-change spacer formed to contact the bottom electrode; an electrical conductive layer having a vertical portion and a horizontal portion, wherein the electrical conductive layer electrically connects to the phase-change spacer via the horizontal portion; and a top electrode electrically connected to the electrical conductive layer via the vertical portion of the electrically conductive layer.
Public/Granted literature
- US20100006814A1 PHASE-CHANGE MEMORY ELEMENT Public/Granted day:2010-01-14
Information query
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