Invention Grant
US07919774B2 Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof
有权
非易失性存储元件，非易失性存储装置及其制造方法
- Patent Title: Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof
- Patent Title (中): 非易失性存储元件，非易失性存储装置及其制造方法
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Application No.: US12709148Application Date: 2010-02-19
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Publication No.: US07919774B2Publication Date: 2011-04-05
- Inventor: Yoshio Kawashima , Takeshi Takagi , Takumi Mikawa , Zhiqiang Wei
- Applicant: Yoshio Kawashima , Takeshi Takagi , Takumi Mikawa , Zhiqiang Wei
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-062316 20060308
- Main IPC: H01L29/68
- IPC: H01L29/68 ; H01L21/34
Abstract:
A lower electrode layer 2, an upper electrode layer 4 formed above the lower electrode layer 2, and a metal oxide thin film layer 3 formed between the lower electrode layer 2 and the upper electrode layer 4 are provided. The metal oxide thin film layer 3 includes a first region 3a whose value of resistance increases or decreases by an electric pulse that is applied between the lower electrode layer 2 and the upper electrode layer 4 and a second region 3b arranged around the first region 3a and having a larger content of oxygen than the first region 3a, wherein the lower and upper electrode layers 2 and 4 and at least a part of the first region 3a are arranged so as to overlap as viewed from the direction of the thickness of the first region 3a.
Public/Granted literature
- US20100200852A1 NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF MANUFACTURE THEREOF Public/Granted day:2010-08-12
Information query
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