Invention Grant
- Patent Title: High frequency diode and method for producing same
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Application No.: US11700492Application Date: 2007-01-30
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Publication No.: US07919776B2Publication Date: 2011-04-05
- Inventor: Kazunari Kurita
- Applicant: Kazunari Kurita
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kolisch Hartwell, P.C.
- Priority: JP2006-022832 20060131
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A high frequency diode comprising: a P type region, an N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is made of a silicon wafer that has a carbon concentration of 5×1015 to 5×1017 atoms/cm3, interstitial oxygen concentration of 6.5×1017 to 13.5×1017 atoms/cm3, and a resistivity of 100 Ωcm or more.
Public/Granted literature
- US20080006823A1 High frequency diode and method for producing same Public/Granted day:2008-01-10
Information query
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