Invention Grant
US07919791B2 Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
有权
掺杂的III-V族氮化物材料，以及包含它们的微电子器件和器件前体结构
- Patent Title: Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
- Patent Title (中): 掺杂的III-V族氮化物材料，以及包含它们的微电子器件和器件前体结构
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Application No.: US10107001Application Date: 2002-03-25
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Publication No.: US07919791B2Publication Date: 2011-04-05
- Inventor: Jeffrey S. Flynn , George R. Brandes
- Applicant: Jeffrey S. Flynn , George R. Brandes
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Hultquist IP
- Agent Vincent K. Gustafson
- Main IPC: H01L29/778
- IPC: H01L29/778
Abstract:
A Group III-V nitride microelectronic device structure including a delta doped layer and/or a doped superlattice. A delta doping method is described, including the steps of: depositing semiconductor material on a substrate by a first epitaxial film growth process; terminating the deposition of semiconductor material on the substrate to present an epitaxial film surface; delta doping the semiconductor material at the epitaxial film surface, to form a delta doping layer thereon; terminating the delta doping; resuming deposition of semiconductor material to deposit semiconductor material on the delta doping layer, in a second epitaxial film growth process; and continuing the semiconductor material second epitaxial film growth process to a predetermined extent, to form a doped microelectronic device structure, wherein the delta doping layer is internalized in semiconductor material deposited in the first and second epitaxial film growth processes.
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