Invention Grant
US07919794B2 Memory cell and method of forming a magnetic tunnel junction (MTJ) of a memory cell
有权
存储单元和形成存储单元的磁性隧道结（MTJ）的方法
- Patent Title: Memory cell and method of forming a magnetic tunnel junction (MTJ) of a memory cell
- Patent Title (中): 存储单元和形成存储单元的磁性隧道结（MTJ）的方法
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Application No.: US11970557Application Date: 2008-01-08
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Publication No.: US07919794B2Publication Date: 2011-04-05
- Inventor: Shiqun Gu , Seung H. Kang , Matt Nowak
- Applicant: Shiqun Gu , Seung H. Kang , Matt Nowak
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM, Incorporated
- Current Assignee: QUALCOMM, Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Jonathan T. Velasco
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A memory including a memory cell and method for producing the memory cell are disclosed. The memory includes a substrate in a first plane. A first metal connection extending in a second plane is provided. The second plane is substantially perpendicular to the first plane. A magnetic tunnel junction (MTJ) is provided having a first layer coupled to the metal connection such that the first layer of the MTJ is oriented along the second plane.
Public/Granted literature
- US20090174015A1 Memory Cell and Method of Forming a Magnetic Tunnel Junction (MTJ) of a Memory Cell Public/Granted day:2009-07-09
Information query
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