Invention Grant
- Patent Title: Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate
- Patent Title (中): 线结构，制造线的方法，薄膜晶体管基板以及制造薄膜晶体管基板的方法
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Application No.: US11961149Application Date: 2007-12-20
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Publication No.: US07919795B2Publication Date: 2011-04-05
- Inventor: Je-Hun Lee , Chang-Oh Jeong , Eun-Guk Lee , Do-Hyun Kim
- Applicant: Je-Hun Lee , Chang-Oh Jeong , Eun-Guk Lee , Do-Hyun Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2006-0131473 20061221; KR10-2007-0050697 20070525
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/40 ; H01L29/43 ; H01L29/49 ; H01L33/00
Abstract:
Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including copper, copper solid solution layer.
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