Invention Grant
- Patent Title: Image sensor and fabricating method thereof
- Patent Title (中): 图像传感器及其制造方法
-
Application No.: US12204818Application Date: 2008-09-05
-
Publication No.: US07919798B2Publication Date: 2011-04-05
- Inventor: Sun-Chan Lee
- Applicant: Sun-Chan Lee
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2007-0090950 20070907
- Main IPC: H01L31/062
- IPC: H01L31/062

Abstract:
An image sensor and fabricating method thereof for preventing cross-talk between neighboring pixels by providing at least three light-shield walls combining to extend vertically above a lateral periphery of a photodiode for deflecting light from a microlens array towards the photodiode.
Public/Granted literature
- US20090065821A1 IMAGE SENSOR AND FABRICATING METHOD THEREOF Public/Granted day:2009-03-12
Information query
IPC分类: