A semiconductor device including a semiconductor substrate having a logic formation region where a logic device is formed; a first impurity region formed in an upper surface of the semiconductor substrate in the logic formation region; a second impurity region formed in an upper surface of the semiconductor substrate in the logic formation region; a third impurity region formed in an upper surface of the first impurity region and having a conductivity type different from that of the second impurity region; a fourth region formed in an upper surface of the second impurity region and having a conductivity type different from that of the second impurity region; a first silicide film formed in an upper surface of the third impurity region; a second silicide film formed in an upper surface of the fourth impurity region and having a larger thickness than the first silicide film.