Invention Grant
- Patent Title: RF power transistor structure and a method of forming the same
- Patent Title (中): RF功率晶体管结构及其形成方法
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Application No.: US12255421Application Date: 2008-10-21
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Publication No.: US07919801B2Publication Date: 2011-04-05
- Inventor: Bishnu Prasanna Gogoi
- Applicant: Bishnu Prasanna Gogoi
- Applicant Address: US AZ Phoenix
- Assignee: HVVi Semiconductors, Inc.
- Current Assignee: HVVi Semiconductors, Inc.
- Current Assignee Address: US AZ Phoenix
- Agency: Cool Patent, P.C.
- Agent Kenneth J. Cool
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed.
Public/Granted literature
- US20090261421A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE Public/Granted day:2009-10-22
Information query
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