Invention Grant
- Patent Title: Semiconductor memory device having a capacitor structure with a desired capacitance and manufacturing method therefor
- Patent Title (中): 具有所需电容的电容器结构的半导体存储器件及其制造方法
-
Application No.: US12234060Application Date: 2008-09-19
-
Publication No.: US07919803B2Publication Date: 2011-04-05
- Inventor: Naoki Yokoi
- Applicant: Naoki Yokoi
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Scully, Scott, Murphy and Presser, P.C.
- Priority: JP2007-243747 20070920
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L29/00 ; H01L21/20
Abstract:
A semiconductor memory device in which a plurality of capacitors each including a columnar lower electrode, a capacitor insulation film and an upper electrode are stacked with interlayer films therebetween, a contact plug connects an upper face of each lower electrode of a lower layer with a bottom face of each lower electrode of an upper layer, and another contact plug connects upper electrodes of the capacitors in respective layers with each other.
Public/Granted literature
- US20090078981A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2009-03-26
Information query
IPC分类:
