Invention Grant
- Patent Title: Non-volatile memory cell with heating element
- Patent Title (中): 带加热元件的非易失性存储单元
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Application No.: US11729710Application Date: 2007-03-29
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Publication No.: US07919807B1Publication Date: 2011-04-05
- Inventor: Jeffrey A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
- Applicant: Jeffrey A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Mark C. Pickering
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/792
Abstract:
The number of times that a non-volatile memory (NVM) can be programmed and erased is substantially increased by utilizing a localized heating element that anneals the oxide that is damaged by tunneling charge carriers when the NVM is programmed and erased. The program and erase voltages are also reduced when heat from the heating element is applied prior to programming and erasing.
Information query
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