Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11956715Application Date: 2007-12-14
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Publication No.: US07919818B2Publication Date: 2011-04-05
- Inventor: Saichiro Kaneko , Takashi Kunimatsu
- Applicant: Saichiro Kaneko , Takashi Kunimatsu
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-041902 20070222
- Main IPC: H01L21/331
- IPC: H01L21/331
Abstract:
A semiconductor device includes a principal IGBT controllable in accordance with a gate voltage applied to a gate electrode thereof, a current detecting IGBT connected to the principal IGBT in parallel and a current detecting part including a detecting resistor capable of detecting a current passing through the current detecting IGBT. The base region of the current detecting IGBT and the emitter region of the principal IGBT are electrically connected to each other, and the emitter region of the current detecting IGBT and the emitter region of the principal IGBT are electrically connected to each other through the detecting resistor.
Public/Granted literature
- US20080203533A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-08-28
Information query
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