Invention Grant
- Patent Title: Method and structure for reducing noise in CMOS image sensors
- Patent Title (中): 降低CMOS图像传感器噪声的方法和结构
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Application No.: US11077576Application Date: 2005-03-11
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Publication No.: US07919827B2Publication Date: 2011-04-05
- Inventor: Tien-Chi Wu , Tsung-Yi Lin
- Applicant: Tien-Chi Wu , Tsung-Yi Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A method and device is disclosed for reducing noises in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light blocking portion includes a black light filter layer and an opaque layer covering the support feature section. The light blocking portion may also cover a peripheral portion of the light sensing structure. The method for forming the CMOS image sensors includes using film patterning and etching processes to selectively form the opaque layer where the light blocking portion is desired but not over the active section.
Public/Granted literature
- US20060202295A1 Method and structure for reducing noise in CMOS image sensors Public/Granted day:2006-09-14
Information query
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