Invention Grant
- Patent Title: Stack resistor structure for integrated circuits
- Patent Title (中): 集成电路的堆叠电阻结构
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Application No.: US11652895Application Date: 2007-01-11
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Publication No.: US07919832B2Publication Date: 2011-04-05
- Inventor: Fu-Lung Hsueh , Sung-Chieh Lin
- Applicant: Fu-Lung Hsueh , Sung-Chieh Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: K&L Gates LLP
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A resistor structure for an integrated circuit includes a first set of contacts connected between a semiconductor layer and a first conductive layer; and a second set of plugs connected between the first conductive layer and a second conductive layer, wherein the first set of contacts and the second set of plugs are coupled together as a first resistor segment to provide a predetermined resistance for the integrated circuit.
Public/Granted literature
- US20080169514A1 Stack resistor structure for integrated circuits Public/Granted day:2008-07-17
Information query
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