Invention Grant
- Patent Title: Formation of a hybrid integrated circuit device
- Patent Title (中): 形成混合集成电路器件
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Application No.: US12004906Application Date: 2007-12-20
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Publication No.: US07919845B2Publication Date: 2011-04-05
- Inventor: James Karp , Steven P. Young , Bernard J. New , Scott S. Nance , Patrick J. Crotty
- Applicant: James Karp , Steven P. Young , Bernard J. New , Scott S. Nance , Patrick J. Crotty
- Applicant Address: US CA San Jose
- Assignee: Xilinx, Inc.
- Current Assignee: Xilinx, Inc.
- Current Assignee Address: US CA San Jose
- Agent W. Eric Webostad; John J. King
- Main IPC: H01L23/02
- IPC: H01L23/02
Abstract:
Formation of a hybrid integrated circuit device is described. A design for the integrated circuit is obtained and separated into at least two portions responsive to component sizes. A first die is formed for a first portion of the hybrid integrated circuit device using at least in part a first minimum dimension lithography. A second die is formed for a second portion of the device using at least in part a second minimum dimension lithography, where the second die has the second minimum dimension lithography as a smallest lithography used for the forming of the second die. The first die and the second die are attached to one another via coupling interconnects respectively thereof to provide the hybrid integrated circuit device.
Public/Granted literature
- US20090160482A1 Formation of a hybrid integrated circuit device Public/Granted day:2009-06-25
Information query
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