Invention Grant
US07919846B2 Stacked semiconductor component having through wire interconnect 有权
具有通过电线互连的堆叠半导体部件

  • Patent Title: Stacked semiconductor component having through wire interconnect
  • Patent Title (中): 具有通过电线互连的堆叠半导体部件
  • Application No.: US12703551
    Application Date: 2010-02-10
  • Publication No.: US07919846B2
    Publication Date: 2011-04-05
  • Inventor: David R. Hembree
  • Applicant: David R. Hembree
  • Applicant Address: US ID Boise
  • Assignee: Micron Technology, Inc.
  • Current Assignee: Micron Technology, Inc.
  • Current Assignee Address: US ID Boise
  • Agent Stephen A. Gratton
  • Main IPC: H01L21/44
  • IPC: H01L21/44
Stacked semiconductor component having through wire interconnect
Abstract:
A stacked semiconductor component includes a plurality of semiconductor substrates in a stacked array and a continuous wire extending through aligned vias on the semiconductor substrates of the stacked array in electrical contact with contacts on the semiconductor substrates. A method for fabricating the semiconductor component includes the steps of stacking the semiconductor substrates in a stacked array with aligned vias; threading a wire through the aligned vias; and forming a plurality of electrical connections between the wire and the contacts on the semiconductor substrates.
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