Invention Grant
- Patent Title: Semiconductor wafer, semiconductor device, and semiconductor device manufacturing method
- Patent Title (中): 半导体晶片,半导体器件和半导体器件制造方法
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Application No.: US11713436Application Date: 2007-03-02
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Publication No.: US07919847B2Publication Date: 2011-04-05
- Inventor: Atsushi Ebara
- Applicant: Atsushi Ebara
- Applicant Address: JP Tokyo
- Assignee: Ricoh Company, Ltd.
- Current Assignee: Ricoh Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Cooper & Dunham LLP
- Priority: JP2006-055998 20060302
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor wafer includes a plurality of chip areas, a scribe line area, a bonding pad, a probing pad, and a pad connection wiring. The plurality of chip areas are configured to be arranged in a matrix form. The scribe line area is configured to separate the plurality of chip areas from each other. The bonding pad is configured to be connected with an external terminal. The probing pad is configured to be contacted with a probe wire. The pad connection wiring is configured to electrically connect the bonding pad to the probing pad. The bonding pad and the probing pad are located at a predetermined distance from each other in each of the plurality of chip areas. The pad connection wiring has a portion located in the scribe line area.
Public/Granted literature
- US20080210935A1 Semiconductor wafer, semiconductor device, and semiconductor device manufacturing method Public/Granted day:2008-09-04
Information query
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