Invention Grant
US07919852B2 Semiconductor device and insulating substrate utilizing a second conductor with a non-joint area
有权
半导体器件和利用具有非接合区域的第二导体的绝缘基板
- Patent Title: Semiconductor device and insulating substrate utilizing a second conductor with a non-joint area
- Patent Title (中): 半导体器件和利用具有非接合区域的第二导体的绝缘基板
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Application No.: US11332539Application Date: 2006-01-17
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Publication No.: US07919852B2Publication Date: 2011-04-05
- Inventor: Junji Yamada
- Applicant: Junji Yamada
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-074805 20050316
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L21/00 ; H05K7/20
Abstract:
A semiconductor device including: an insulating substrate including a ceramic substrate having first and second principal surfaces, a first metallic conductor fixed on the first principal surface, and a second metallic conductor fixed on the second principal surface; a semiconductor element disposed on the first metallic conductor on the first principal surface; and a base plate connected to the second metallic conductor on the second principal surface, and on which the insulating substrate being disposed. The second metallic conductor includes a joint area connected to the second principal surface, and a non-joint area formed around the joint area.
Public/Granted literature
- US20060220235A1 Semiconductor device and insulating substrate for the same Public/Granted day:2006-10-05
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