Invention Grant
- Patent Title: Copper die bumps with electromigration cap and plated solder
- Patent Title (中): 带有电迁移盖和镀锡焊料的铜芯凸块
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Application No.: US11728082Application Date: 2007-03-23
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Publication No.: US07919859B2Publication Date: 2011-04-05
- Inventor: Ting Zhong , Val Dubin , Mark Bohr
- Applicant: Ting Zhong , Val Dubin , Mark Bohr
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent David L. Guglielmi
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
Embodiments of the invention include apparatuses and methods relating to copper die bumps with electtomigration cap and plated solder. In one embodiment, an apparatus comprises an integrated circuit die, a plurality of copper bumps on a surface of the die, electromigration(EM) caps substantially covering a mating surface of the copper bumps capable of controlling intermetallic formation between the cooper bumps and solder, and solder plating on the EM caps capable of protecting the EM caps from oxidation prior to packaging.
Public/Granted literature
- US20080230896A1 Copper die bumps with electromigration cap and plated solder Public/Granted day:2008-09-25
Information query
IPC分类: