Invention Grant
- Patent Title: Carrier substrate and integrated circuit
- Patent Title (中): 载体衬底和集成电路
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Application No.: US11839440Application Date: 2007-08-15
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Publication No.: US07919868B2Publication Date: 2011-04-05
- Inventor: Harry Hedler , Thorsten Meyer
- Applicant: Harry Hedler , Thorsten Meyer
- Applicant Address: DE Munich DE Neubiberg
- Assignee: Qimonda AG,Infineon Technologies AG
- Current Assignee: Qimonda AG,Infineon Technologies AG
- Current Assignee Address: DE Munich DE Neubiberg
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A carrier substrate comprising a through contact connecting a first contact field on a top face of the carrier substrate to a second contact field on a bottom face of the carrier substrate and a substrate material being provided around the through contact.
Public/Granted literature
- US20090045512A1 CARRIER SUBSTRATE AND INTEGRATED CIRCUIT Public/Granted day:2009-02-19
Information query
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