Invention Grant
- Patent Title: Semiconductor power converter
- Patent Title (中): 半导体功率转换器
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Application No.: US12193209Application Date: 2008-08-18
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Publication No.: US07919941B2Publication Date: 2011-04-05
- Inventor: Shigehisa Aoyagi , Yoshitaka Iwaji , Kazuaki Tobari , Kiyoshi Sakamoto , Donsheng Li
- Applicant: Shigehisa Aoyagi , Yoshitaka Iwaji , Kazuaki Tobari , Kiyoshi Sakamoto , Donsheng Li
- Applicant Address: JP Tokyo JP Ibaraki JP Tokyo
- Assignee: Hitachi, Ltd.,Hitachi Car Engineering Co., Ltd.,Hitachi Industrial Equipment Systems Co., Ltd.
- Current Assignee: Hitachi, Ltd.,Hitachi Car Engineering Co., Ltd.,Hitachi Industrial Equipment Systems Co., Ltd.
- Current Assignee Address: JP Tokyo JP Ibaraki JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2007-219195 20070827
- Main IPC: H02P23/00
- IPC: H02P23/00

Abstract:
A semiconductor power converter includes a power converter for converting direct current to three-phase alternating current or vice versa; a means for detecting a current in an alternating current side of the power converter; a means for providing a current reference in the alternating current side of the power converter; a current controller for calculating a voltage reference in the alternating current side of the power converter to match the current reference and a value of the detected current; and a pulse width modulation means for controlling the power converter through pulse width modulation based on the voltage reference, wherein the current reference is used in place of the value of the detected current for at least one phase current among three phase currents in the alternating current side.
Public/Granted literature
- US20090058331A1 Semiconductor Power Converter Public/Granted day:2009-03-05
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