Invention Grant
US07920015B2 Methods and apparatus to sense a PTAT reference in a fully isolated NPN-based bandgap reference
有权
在完全隔离的基于NPN的带隙基准中检测PTAT参考的方法和装置
- Patent Title: Methods and apparatus to sense a PTAT reference in a fully isolated NPN-based bandgap reference
- Patent Title (中): 在完全隔离的基于NPN的带隙基准中检测PTAT参考的方法和装置
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Application No.: US11932142Application Date: 2007-10-31
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Publication No.: US07920015B2Publication Date: 2011-04-05
- Inventor: Ananthasayanam Chellappa
- Applicant: Ananthasayanam Chellappa
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John J. Patti; Wade J Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G05F3/26
- IPC: G05F3/26 ; G05F3/16
Abstract:
In a traditional, fully-isolated bandgap reference circuits, it was difficult to detect currents that are proportional to absolute temperature (PTAT). Here, a PTAT reference in a fully isolated NPN-based bandgap references are disclosed. These circuits in particular are able to make detections using various current without the need for stand-along operational amplifiers.
Public/Granted literature
- US20090108918A1 METHODS AND APPARATUS TO SENSE A PTAT REFERENCE IN A FULLY ISOLATED NPN-BASED BANDGAP REFERENCE Public/Granted day:2009-04-30
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