Invention Grant
US07920192B2 Photoelectric conversion device with a pixel region and a peripheral circuit region sharing a same substrate
有权
具有像素区域和共用相同基板的外围电路区域的光电转换装置
- Patent Title: Photoelectric conversion device with a pixel region and a peripheral circuit region sharing a same substrate
- Patent Title (中): 具有像素区域和共用相同基板的外围电路区域的光电转换装置
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Application No.: US11774270Application Date: 2007-07-06
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Publication No.: US07920192B2Publication Date: 2011-04-05
- Inventor: Takanori Watanabe , Tetsuya Itano , Hidekazu Takahashi , Shunsuke Takimoto , Kotaro Abukawa , Hiroaki Naruse , Shigeru Nishimura , Masatsugu Itahashi
- Applicant: Takanori Watanabe , Tetsuya Itano , Hidekazu Takahashi , Shunsuke Takimoto , Kotaro Abukawa , Hiroaki Naruse , Shigeru Nishimura , Masatsugu Itahashi
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2006-210531 20060802
- Main IPC: H04N5/335
- IPC: H04N5/335
Abstract:
A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.
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