Invention Grant
- Patent Title: Method and apparatus for irradiating laser
- Patent Title (中): 用于照射激光的方法和装置
-
Application No.: US12753214Application Date: 2010-04-02
-
Publication No.: US07920277B2Publication Date: 2011-04-05
- Inventor: Mitsuru Nakata , Hirofumi Shimamoto , Hiroshi Kanoh
- Applicant: Mitsuru Nakata , Hirofumi Shimamoto , Hiroshi Kanoh
- Applicant Address: JP Tokyo JP Kanagawa
- Assignee: NEC Corporation,NEC LCD Technologies, Ltd.
- Current Assignee: NEC Corporation,NEC LCD Technologies, Ltd.
- Current Assignee Address: JP Tokyo JP Kanagawa
- Agency: Dickstein Shapiro LLP
- Priority: JP2006-115710 20060419
- Main IPC: G01B11/00
- IPC: G01B11/00 ; G01B11/28 ; G01J3/46

Abstract:
A laser irradiation process includes: scanning a substrate with laser having a predetermined lasing frequency at different irradiation intensities to form a plurality of first irradiation areas corresponding to the irradiation intensities; illuminating the first irradiation areas to reflected light receive from the first irradiation areas; determining microcrystallization intensity based on the received reflected light; and determining irradiation intensity based on the thus determined microcrystallization intensity. The laser irradiation process uses the irradiation intensity for irradiating a polycrystalline film in a product semiconductor device.
Public/Granted literature
- US20100190276A1 METHOD AND APPARATUS FOR IRRADIATING LASER Public/Granted day:2010-07-29
Information query