Invention Grant
- Patent Title: Multilayer chip capacitor
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Application No.: US11987835Application Date: 2007-12-05
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Publication No.: US07920370B2Publication Date: 2011-04-05
- Inventor: Byoung Hwa Lee , Sung Kwon Wi , Hae Suk Chung , Dong Seok Park , Sang Soo Park , Min Cheol Park
- Applicant: Byoung Hwa Lee , Sung Kwon Wi , Hae Suk Chung , Dong Seok Park , Sang Soo Park , Min Cheol Park
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2007-0011460 20070205; KR10-2007-0084183 20070821
- Main IPC: H01G4/228
- IPC: H01G4/228 ; H01G4/248 ; H01G4/06

Abstract:
A multilayer chip capacitor includes: a capacitor body having first and second side surfaces and a bottom surface; a plurality of first and second internal electrodes in the capacitor body; first and second external electrodes having a first polarity and formed on the first and second side surfaces, respectively, to cover a respective lower edge of the side surfaces and to partially extend to the bottom surface; and a third external electrode having a second polarity and formed on the bottom surface. The internal electrodes are disposed in perpendicular to the bottom surface. Each of the first internal electrodes has a first lead drawn to the first side and bottom surfaces and a second lead drawn to the second side and bottom surfaces. Each of the second internal electrodes has a third lead drawn to the bottom surface.
Public/Granted literature
- US20080186652A1 Multilayer chip capacitor Public/Granted day:2008-08-07
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