Invention Grant
- Patent Title: Semiconductor integrated circuit device and method of fabricating the semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件及半导体集成电路器件的制造方法
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Application No.: US12055035Application Date: 2008-03-25
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Publication No.: US07920400B2Publication Date: 2011-04-05
- Inventor: Ju-Yong Lee , Sung-Ho Jang , Tae-Young Chung , Joon Han
- Applicant: Ju-Yong Lee , Sung-Ho Jang , Tae-Young Chung , Joon Han
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2007-0041561 20070427
- Main IPC: G11C5/06
- IPC: G11C5/06

Abstract:
A semiconductor integrated circuit device having a 6F2 layout is provided. The semiconductor integrated circuit device includes a substrate; a plurality of unit active regions disposed in the substrate and extending in a first direction; first and second access transistors including first and second gate lines disposed on the substrate and extending across the unit active regions in a second direction forming an acute angle with the first direction; a first junction area disposed in the substrate between the first and second gate lines and second junction areas disposed on sides of the first and second gate lines where the first junction area is not disposed; a plurality of bitlines disposed on the substrate and extending in a third direction forming an acute angle with the first direction; and a plurality of bitline contacts directly connecting the first junction area and the bitlines.
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